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NTE2331 Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode Applications: D Color TV Horizontal Deflection Output D Color Display Horizontal Deflection Output Features: D High Speed (tf = 100nsec) D High Breakdown Voltage (VCBO = 1500V) D High Reliability D On-Chip Damper Diode Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICES ICBO Collector Sustain Voltage Emitter Cutoff Current Saturation Voltage Collector to Emitter Saturation Voltage Base to Emitter IEBO VCE(sat) VBE(sat) Test Conditions VCE = 1500V VCB = 800V VEB = 4V IC = 5A, IB = 1.0A IC = 5A, IB = 1.0A Min - - 800 40 - - Typ - - - - - - Max 1.0 10 - 130 5 1.5 Unit mA A V mA V V VCEO(sus) IC = 100mA, IB = 0 Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter DC Current Gain Symbol hFE1 hFE2 Diode Forward Voltage Fall Time VF tf Test Conditions VCE = 5V, IC = 1A VCE = 5V, IC = 5A IEC = 6A IC = 4A, IB1 = 0.8A, IB2 = 1.6A Min 8 5 - - Typ - - - 0.1 Max - 10 2 0.3 V s Unit .221 (5.6) .123 (3.1) .134 (3.4) Dia .630 (16.0) .315 (8.0) .866 (22.0) B .158 (4.0) C E .804 (20.4) .215 (5.45) .040 (1.0) |
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